advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 8m fast switching characteristic i d 125a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.5 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice AP85T10GR-HF halogen-free product 125 201210291 parameter rating drain-source voltage 100 total power dissipation 300 -55 to 175 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 120 continuous drain current (chip) continuous drain current, v gs @ 10v 88 pulsed drain current 1 300 thermal data parameter 1 total power dissipation 2.42 operating junction temperature range -55 to 175 storage temperature range g d s a p85t10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-262 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. g d s to-262(r)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 8 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - 75 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 100 160 nc q gs gate-source charge v ds =80v - 24 - nc q gd gate-drain ("miller") charge v gs =10v - 45 - nc t d(on) turn-on delay time v ds =50v - 23 - ns t r rise time i d =40a - 95 - ns t d(off) turn-off delay time r g =3.3 -47- ns t f fall time v gs =10v - 78 - ns c iss input capacitance v gs =0v - 4670 7470 pf c oss output capacitance v ds =25v - 770 - pf c rss reverse transfer capacitance f=1.0mhz - 280 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 85 - ns q rr reverse recovery charge di/dt=100a/s - 290 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 120a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP85T10GR-HF
a p85t10gr-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 300 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0 40 80 120 160 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 9.0v 8.0v 7.0v v g = 6.0v t c =175 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200 t j ,junction temperature ( o c) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized bv dss (v)
ap85t10gr-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =60v v ds =80v i d =40a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 2000 4000 6000 8000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
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